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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms TC = 80 C TC = 25 C tP = 1 ms, TC = 80C VCES IC,nom. IC ICRM 1200 75 170 150 V A A A TC=25C, Transistor Ptot 690 W VGES +/- 20V V IF 75 A IFRM 150 A VR = 0V, t p = 10ms, T Vj = 125C 2 It 1,19 kA2s RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 75A, V GE = 15V, Tvj = 25C IC = 75A, V GE = 15V, Tvj = 125C IC = 3mA, V CE = VGE, Tvj = 25C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 2,9 6,5 V V V VGE = -15V...+15V QG - 0,8 - C f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies - 5,1 - nF f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V VCE = 1200V, V GE = 0V, Tvj = 25C VCE = 1200V, V GE = 0V, Tvj = 125C VCE = 0V, V GE = 20V, Tvj = 25C Cres ICES - 0,33 3 300 - 92 400 nF A A nA IGES - prepared by: Mark Munzer approved by: M. Hierholzer date of publication: 9.9.1999 revision: 2 1(8) Seriendatenblatt_BSM75GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 75A, V CE = 600V VGE = 15V, R G = 10, Tvj = 25C VGE = 15V, R G = 10, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 75A, V CE = 600V VGE = 15V, R G = 10, Tvj = 25C VGE = 15V, R G = 10, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 75A, V CE = 600V VGE = 15V, R G = 10, Tvj = 25C VGE = 15V, R G = 10, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 75A, V CE = 600V VGE = 15V, R G = 10, Tvj = 25C VGE = 15V, R G = 10, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip TC=25C IC = 75A, V CE = 600V, V GE = 15V RG = 10, Tvj = 125C, LS = 60nH IC = 75A, V CE = 600V, V GE = 15V RG = 10, Tvj = 125C, LS = 60nH tP 10sec, V GE 15V, R G = 10 TVj125C, V CC=900V, V CEmax=VCES -LsCE *dI/dt ISC LsCE 540 40 A nH Eoff 9 mWs Eon 7,5 mWs tf 0,05 0,07 s s td,off 0,3 0,35 s s tr 0,05 0,05 s s td,on 0,05 0,06 s s min. typ. max. RCC`+EE` - 1,0 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 75A, V GE = 0V, Tvj = 25C IF = 75A, V GE = 0V, Tvj = 125C IF = 75A, - di F/dt = 2000A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Sperrverzogerungsladung recovered charge IF = 75A, - di F/dt = 2000A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 75A, - di F/dt = 2000A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Erec 3 6,2 mWs mWs Qr 9 16,5 As As IRM 85 105 A A VF min. - typ. 1,8 1,7 max. 2,3 2,2 V V 2(8) Seriendatenblatt_BSM75GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = 1 W/m * K / grease = 1 W/m * K RthCK RthJC - typ. 0,05 max. 0,18 0,5 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M6 M1 3 AL2O3 20 mm 11 mm 275 6 Nm terminals M5 M2 2,5 5 Nm G 250 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) Seriendatenblatt_BSM75GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 150 125 Tj = 25C Tj = 125C 100 IC [A] 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 150 IC = f (VCE) T vj = 125C 125 VGE = 17V VGE = 15V VGE = 13V 100 VGE = 11V VGE = 9V VGE = 7V IC [A] 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) Seriendatenblatt_BSM75GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 150 125 Tj = 25C Tj = 125C 100 IC [A] 75 50 25 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 150 IF = f (VF) 125 Tj = 25C Tj = 125C 100 IF [A] 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) Seriendatenblatt_BSM75GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff =10 , VCE = 600V, T j = 125C 24 Eoff 20 Eon Erec 16 E [mJ] 12 8 4 0 0 25 50 75 100 125 150 IC [A] Schaltverluste (typisch) Switching losses (typical) 30 Eoff Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 75A , VCE = 600V , T j = 125C 25 Eon Erec 20 E [mJ] 15 10 5 0 0 10 20 30 40 50 60 RG [] 6(8) Seriendatenblatt_BSM75GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 1 0,1 ZthJC [K / W] 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 20,13 0,002 65,43 0,002 2 60,93 0,03 173,31 0,03 3 79,4 0,066 189,08 0,072 4 19,54 1,655 72,18 0,682 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 175 150 125 VGE = 15V, R g = 10 Ohm, T vj= 125C IC [A] 100 75 50 25 0 0 IC,Modul IC,Chip 200 400 600 800 1000 1200 1400 VCE [V] 7(8) Seriendatenblatt_BSM75GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GB120DLC 8(8) Seriendatenblatt_BSM75GB120DLC.xls |
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